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aluminum nitride properties, such as high thermal conductivity (170-230W/mK), electrical insulation, small dielectric constant and coefficient of thermal expansion (CTE) matching to that of silicon wafer, make it the perfect substrate material for power modules, LED packages for cooling circuits, ICs, IGBT control modules, electrostatic chucks and heat sinks. It also has excellent resistance to corrosion by molten metal and is ideal as crucible material for casting iron, aluminium or aluminum alloys.

Synthesis of AlN – carbothermal reduction and direct nitridation

The IUPAC chemical formula for Aluminum Nitride is Azanylidynealumane, which can be synthesized by the carbothermal reduction of Aluminium oxide in the presence of gaseous nitrogen or ammonia or by directly nitriding the powder. The mixture is sintered using sintering aids like Y2O3 or CaO and hot pressed to produce dense technical grade materials.

Ceramics manufacturing processes for AlN based on its excellent performance:

The aluminum nitride powder can be prepared by various methods, including direct nitridation, carbide reduction process, energetic ball milling, self-propagating high-temperature synthesis, in situ autoreactive syntheses, plasma chemical synthesis, chemical vapour deposition method and solvothermal method. The nitride powder can be shaped and sintered in various sintering equipment such as ceramic pot, rotary kiln, refractory furnace, oven, sintering machine.

In addition to its excellent properties, Aluminum nitride is an interesting alternative to Beryllium Oxide (BeO) in semiconductor applications due to the lack of BeO toxicity. However, BeO metallization processes can be expensive and the production of BeO chips is prone to contamination.

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