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What property does Bismuth Telluride have?

Bismuth telluride The molecular formula of the powder is Bi2Te3. Bismuth telluride, an indirect band-gap semiconductor, has a band gap of 0.145eV at room temperature, electron mobility of 0.135m2/(V*s) and hole mobility of 4.×10-2m2/ (V*s), and a coefficient of thermoelectric quality of 1.6×10-3/K.
Bismuth Telluride is a dense material with a density 7.8587g/cm3 at a melting temperature of 585degC. It has a covalent bond and certain ionic bonds. Bismuth telluride exhibits the characteristics of a solid topological insulator. It allows electrons on its surface to move freely without wasting any energy.

Bismuth Telluride is prepared by the Bridgman Method, Zone Smelting Method, and Czochralski Method. Bismuth telluride, a semiconductor, has a good electrical conductivity and mediocre thermal conductivity.

What are the applications of Bismuth Teluride?

Bismuth-telluride-based semiconductors have high performance thermoelectric conversion in the low- and mid-temperature range. These materials are widely used to control temperature and for local refrigeration in microelectronics. The applications of these devices are excellent in thermoelectric power generation and industrial waste heat recovery.

By doping the alloy, phonons can be increased to reduce thermal conductivity and to optimize the carrier concentration to improve electrical performance. This will enhance the thermoelectric performance.

The dangers of bismuth-telluride are low but it can be fatal in large doses. The material is able to allow electrons on its surface to move at room temperatures without using energy, which can lead to a significant increase in the speed of a chip.

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