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Gallium nitride (GaN) is a large band gap semiconductor, a wide bandgap semiconductor belonging to the category. Gallium nitride is a material excellent in microwave power transistors. It is a new type of semiconductor material used to develop microelectronic devices and optoelectronic devices. It has similar performance and strong resistance to radiation direct band gap width, atom, high thermal conductivity, good chemical stability (almost no acid etching) and the like.
If used and stored according to specifications, it will not decompose.
Avoid contact with oxides, heat and moisture.
Gallium nitride begins to decompose at 1050 deg C: 2Gallium nitride (s) = 2Ga (g) + N2 (g). X-ray diffraction indicates that Gallium nitride crystal belongs to the hexagonal system of the wurtzite lattice type.
Gallium nitride is not decomposed cold or hot water, dilute or concentrated hydrochloric acid, nitric acid and sulfuric acid or cold 40% HF. It is stable in cold concentrated alkali and soluble in alkali when heated.
Advantages of Gallium nitride
Research and application of Gallium nitride materials are currently the frontiers of global semiconductor research. It is a development of microelectronic and optoelectronic devices for new semiconductor materials. Together with the semiconductor material of SiC, diamond and the like are known as a first-generation of Ge, Si’s successor. Semiconductor materials, second-generation GaAs, InP compound semiconductor materials, and third-generation semiconductor materials. It has a wide direct band gap, strong atomic bond, high thermal conductivity, good chemical stability (hardly corroded by any acid), and strong radiation resistance. It has broad application prospects for photoelectric, high-temperature and high-power devices, and high-frequency microwave devices.
Gallium nitride overcomes a major setback in terms of transistor
Imagine that the cost of Gallium nitride devices is lower than that of silicon-based devices. This cost-effectiveness can be a compelling case, that is, when lower power loss, higher power density, smaller footprint and lower cost are required, Gallium nitride can be chosen instead of silicon.
To achieve this goal in the future, the leading Gallium nitride-based manufacturer Gallium nitride Systems designed a low-current, high-capacity Gallium nitride power transistor for consumer and industrial applications at a cost of less than $1.00.
For 14 years, Efficient Power Conversion (EPC) has been advocating Gallium nitride technology, claiming that one day Gallium nitride will roll silicon in the development of semiconductors; however, EPC’s claims are well-founded. Gallium nitride transistors and integrated circuits (ICs) are processed similarly to silicon, so they can prevent excessive changes in the manufacturing process.
Another reason is that Gallium nitride-based substrates are smaller in size and are suitable for low-voltage applications (<500V). Compared with silicon-based packaging, this will reduce packaging costs by 50%.
Few developers have developed Gallium nitride-based solutions with better performance and lower manufacturing costs than silicon, which has attracted the attention of EPC solutions. Let’s take a look at EPC’s solution, which uses Gallium nitride to make more efficient components.
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